Simulation of Reliability on Nanoscale Devices

We study the trapping kinetics of oxide traps and the subsequent degradation in p-channel MOSFET under bias temperature stress and in presence of random discrete dopants. Using our simulator Minimos-NT we self-consistently undertake time-dependent simulations of defect creation employing our multistate non-radiative multi phonon model. We find that random discrete dopants shift and broaden the distribution of the trapping time constants resulting in lower ∆Vth than one would obtain without random discrete dopants. Additionally, the influence of self-consistency on the trapping kinetics is investigated.